Ferromagnetic-induced component in piezoresistance of GaMnAs
Ferromagnetic-induced component in piezoresistance of GaMnAs
复制标题
GaMnAs 压阻中的铁磁感应分量
DOI：
10.1103/physrevb.87.060410
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and H. Yamaguchi
中科院分区：
文献类型：
--
作者：
K. Onomitsu;I. Mahboob;H. Okamoto;Y. Krockenberger;and H. Yamaguchi
我们已经观察到一个铁磁感应压阻组件集成的GaMnAs压敏电阻的微机械悬臂梁。铁磁相变点附近的压阻随温度和磁场的变化表明，压阻受铁磁有序化的调制。压阻的铁磁感应分量的符号与传统压阻的符号相反，但幅度相当。这种铁磁感应压阻对机械感应应变具有延迟响应，实验确定的响应时间为230 ± 35 ns。
We have observed a ferromagnetic-induced piezoresistance component in a micromechanical cantilever integrated with a GaMnAs piezoresistor. The temperature and the magnetic-field dependence of the piezoresistance around the ferromagnetic transition reveal that the piezoresistance is modulated by ferromagnetic ordering. The sign of the ferromagnetic-induced component of the piezoresistance is opposite to that of the conventional piezoresistance, though of comparable magnitude. This ferromagnetic-induced piezoresistance has a delayed response to mechanically induced strain, with an experimentally determined response time of 230 ± 35 ns.