Magnetoelectric quasi-(0-3) nanocomposite heterostructures
Magnetoelectric quasi-(0-3) nanocomposite heterostructures
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DOI：
10.1038/ncomms7680
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发表时间：
2015-03-01
影响因子：
16.6
通讯作者：
Viehland, Dwight
中科院分区：
文献类型：
--
作者：
Li, Yanxi;Wang, Zhongchang;Viehland, Dwight
磁电复合薄膜在新型多功能器件中具有广阔的应用前景。然而，目前广泛研究的双层外延（2-2）和垂直结构的纳米复合材料（1-3）薄膜系统都存在缺点，限制了它们的应用。在这里，我们设计了一种新的生长策略，通过在膜内交替生长（2-2）和（1-3）层来制备具有磁性准粒子（0）嵌入铁电膜基质（3）中的结构化纳米复合异质结构。新的异质外延膜不仅克服了衬底的钳位效应，而且还显著抑制了通过铁磁相的漏电流路径。我们证明，通过专注于开关特性的压电响应，异质结构显示磁场依赖性的压电性，由于改善耦合之间的压电和磁致伸缩相的良好连接。这种新结构的磁电异质结构为磁电薄膜在微器件中的应用开辟了一条新的途径。
Magnetoelectric composite thin films hold substantial promise for applications in novel multifunctional devices. However, there are presently shortcomings for both the extensively studied bilayer epitaxial (2-2) and vertically architectured nanocomposite (1-3) film systems, restricting their applications. Here we design a novel growth strategy to fabricate an architectured nanocomposite heterostructure with magnetic quasiparticles (0) embedded in a ferroelectric film matrix (3) by alternately growing (2-2) and (1-3) layers within the film. The new heteroepitaxial films not only overcome the clamping effect from substrate, but also significantly suppress the leakage current paths through the ferromagnetic phase. We demonstrate, by focusing on switching characteristics of the piezoresponse, that the heterostructure shows magnetic field dependence of piezoelectricity due to the improved coupling enabled by good connectivity amongst the piezoelectric and magnetostrictive phases. This new architectured magnetoelectric heterostructures may open a new avenue for applications of magnetoelectric films in micro-devices.