Control of InAs Nanowire Growth Directions on Si
Control of InAs Nanowire Growth Directions on Si
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DOI：
10.1021/nl802398j
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发表时间：
2008-10-01
期刊：
影响因子：
10.8
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Tomioka, Katsuhiro;Motohisa, Junichi;Fukui, Takashi
我们报告了Si衬底上InAs纳米线生长方向的控制。我们采用流速调制的选区金属有机物气相外延技术，通过对Si（111）初始表面的改性，实现了在Si上集成垂直InAs纳米线。截面透射电子显微镜和拉曼散射表明，失配位错与局部应变容纳在界面。
We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.