Structure and visible photoluminescence of porous Si1-xGex.
Structure and visible photoluminescence of porous Si1-xGex.
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DOI：
10.1103/physrevb.52.11898
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发表时间：
1995-10
期刊：
影响因子：
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通讯作者：
M. Schoisswohl;J. Cantin;Maria Chamarro;H. Bardeleben;T. Morgenstern;E. Bugiel;W. Kissinger;R. C. Andreu
中科院分区：
文献类型：
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作者：
M. Schoisswohl;J. Cantin;Maria Chamarro;H. Bardeleben;T. Morgenstern;E. Bugiel;W. Kissinger;R. C. Andreu
采用阳极腐蚀法制备了Ge含量分别为5%和20%的p型和p+型掺杂外延层，制备了具有室温可见光发光的多孔Si 1−x Ge x层。发光特征为以650 nm为中心的宽PL带，与多孔Si类似；它的宽度和光谱依赖随着锗的组成变化很小。时间分辨PL谱显示寿命在102ns范围内随锗浓度的增加而减小。p+型层的孔隙结构典型尺度在50-100 Å范围内，具有[100]定向。电子顺磁共振结果表明，材料中存在Si和Ge- p -b中心以及Si和Ge悬垂键中心，其相对浓度与孔隙度和表面钝化状态有关。si和Ge-P - b中心电子顺磁共振谱的角度变化证明了多孔SiGe层的结晶性。
Porous Si 1− x Ge x layers with efficient room-temperature visible photoluminescence (PL) were elaborated by anodical etching from p-and p+-type doped epitaxial layers with Ge contents of 5% and 20%. The luminescence is characterized by a broad PL band centered at 650 nm, similar to the case of porous Si; its width and spectral dependence vary only slightly with the Ge composition. Time-resolved PL spectra reveal lifetimes in the 10 2-ns range decreasing with increasing Ge concentration. The pore structure of the p+-type layers has typical dimensions in the 50–100 Å range and is [100] oriented. Electron paramagnetic resonance results show the presence of Si-and Ge-P b centers as well as Si and Ge dangling-bond centers, the relative concentrations of which depend on the porosity and the surface passivation state. The angular variation of the Si-and Ge-P b center electron paramagnetic resonance spectra demonstrate the crystallinity of the porous SiGe layers.