Extremely small proximity effect in 30keV electron beam drawing with thin calixarene resist for 20 x 20 nm2 pitch dot arrays
Extremely small proximity effect in 30keV electron beam drawing with thin calixarene resist for 20 x 20 nm2 pitch dot arrays
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DOI：
10.1143/apex.1.027003
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发表时间：
2008-02-01
影响因子：
2.3
通讯作者：
Sone, Hayato
中科院分区：
文献类型：
--
作者：
Hosaka, Sumio;Mohamad, Zulfakri;Sone, Hayato
研究了用于图案化介质和量子器件的杯芳烃抗蚀剂在30keV电子束(EB)引出中的邻近效应。采用15 nm厚的杯芳烃抗蚀剂在硅衬底上进行常规电子束拉伸，通过形成和观察20、25、30和40 nm间距的抗蚀剂点阵和测量曝光剂量强度分布(EID)函数来研究邻近效应。结果是，与25×25 nm(2)节距点阵列的2微米正方形的中心、侧面和角部的一些点大小相比，邻近效应可以忽略不计。此外，EID函数中的邻近效应参数ETA小于0.3。可见，电子束拉伸和杯芳烃抗蚀剂体系非常适合于形成超高填充点阵图形。我们演示了20 x 20 nm(2)节距抗蚀剂点阵(约1.6TB/英寸)，其点直径约为14 nm，并且与图案中的任何位置的大小相同。(C)2008年日本应用物理学会。
We studied proximity effect in 30 keV electron beam (EB) drawing with calixarene resist for patterned media and quantum devices. Using about 15-nm-thick calixarene resist on Si substrate in conventional EB drawing system, the proximity effect has been studied by forming and observing 20-, 25-, 30-, and 40-nm-pitch resist dot arrays and measuring exposure dosage intensity distribution (EID) function. As a result, the proximity effect is negligible small due to comparing with some dot sizes in center, side and corner of 2 mu m square with 25 x 25 nm(2) pitch dot arrays. In addition, the proximity effect parameter eta in EID function is less than 0.3. It is clear that the EB drawing and calixarene resist system is very suitable for forming ultrahigh packed dot arrays pattern. We demonstrated 20 x 20 nm(2) pitch resist dot arrays (about 1.6 Tb/in.(2)) with a dot diameter of about 14 nm and the same size as everywhere in the pattern. (C) 2008 The Japan Society of Applied Physics.