Low-noise La0.7Sr0.3MnO3 thermometers for uncooled bolometric applications
Low-noise La0.7Sr0.3MnO3 thermometers for uncooled bolometric applications
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DOI：
10.1063/1.2159546
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发表时间：
2006-01
影响因子：
3.2
通讯作者：
Fan Yang;L. Méchin;J. Routoure;B. Guillet;R. Chakalov
中科院分区：
文献类型：
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作者：
Fan Yang;L. Méchin;J. Routoure;B. Guillet;R. Chakalov
本文报道了在SrTiO_3（STO）和（LaAlO_3）_（0.3）（Sr_2AlTaO_6）_（0.7）衬底上外延生长的La_（0.7）Sr_（0.3）MnO_3（LSMO）薄膜的电阻温度系数（TCR）和低频噪声的测量结果。X射线衍射研究表明，薄膜是（001）取向的。在STO衬底上生长的200 nm厚的薄膜中形成10 μ m宽、575 μ m长的图案的情况下，在300 K下测量到归一化的Hooge参数为9×10− 31 m3。该值是锰氧化物的最低报告值之一，接近标准金属和半导体的测量值。对应的噪声等效温度（NET）在300- 340 K范围内是恒定的，对于在200 nm厚的LSMO膜中图案化的10 μ m宽、575 μ m长的线，在10 Hz和150μA下等于6×10− 7 KHz −1 scin 2。这个非常低的净值与锰氧化物的最佳公布结果相当，甚至低于其他非冷却温度计的净值，如非晶半导体，钒氧化物或半导体。
We report measurements of the temperature coefficient of the resistance (TCR) and the low-frequency noise of epitaxial La0.7Sr0.3MnO3 (LSMO) thin films deposited on SrTiO3 (STO) and (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates. An x-ray-diffraction study showed that the films were (001) oriented. A normalized Hooge parameter of 9×10−31m3 was measured at 300K in the case of a 10‐μm-wide, 575‐μm-long line patterned in the 200‐nm-thick film grown on STO substrate. This value is among the lowest reported values for manganites and close to values measured in standard metals and semiconductors. The corresponding noise equivalent temperature (NET) was constant in the 300–340K range and equal to 6×10−7KHz−1∕2 at 10Hz and 150μA for a 10‐μm-wide, 575‐μm-long line patterned in a 200‐nm-thick LSMO film. This very low NET value is comparable to the best published results for manganites and was even found to be lower than the NET of other uncooled thermometers such as amorphous semiconductors, vanadium oxides, or semiconductin...