Surface premelting in Al(110) observed by core-level photoemission.
Surface premelting in Al(110) observed by core-level photoemission.
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DOI：
10.1103/physrevb.51.7157
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发表时间：
1995-03
期刊：
影响因子：
--
通讯作者：
Theis;Horn
中科院分区：
文献类型：
--
作者：
Theis;Horn
通过在 T=80 K 至低于 Al 块体熔点 (${\mathit{T}}_{\mathit{M}}$=933.5 K) 1 K 的温度下记录 Al 2p 核心级光电发射，在 Al(110) 上观察到表面预熔化。通过比较 Al(110) 和 Al(111) 表面以及液态铝的光谱，建立了准液态层的生长。研究发现，该层的厚度随温度呈对数增长，从熔点以下 150 K 开始，在低于 ${\mathit{T}}_{\mathit{M}}$ 1 K 时厚度约为 8 ML。确定准液态层的局部结构程度和密度与液态铝相同。
Surface premelting has been observed on Al(110) by recording Al 2p core-level photoemission at temperatures from T=80 K up to 1 K below the Al bulk melting point (${\mathit{T}}_{\mathit{M}}$=933.5 K). By comparing spectra from Al(110) and Al(111) surfaces and from liquid aluminum the growth of a quasiliquid layer is established. The thickness of the layer is found to grow logarithmically with temperature, commencing at 150 K below the melting point, with a thickness of about 8 ML at 1 K below ${\mathit{T}}_{\mathit{M}}$. The degree of local structure and density of the quasiliquid layer are determined to be identical to those of liquid aluminum.