Electrical transport properties in Co nanocluster-assembled granular film
Electrical transport properties in Co nanocluster-assembled granular film
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Co纳米簇组装颗粒膜的电传输特性
DOI：
10.1063/1.4977957
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发表时间：
2017-03-14
影响因子：
3.2
通讯作者：
Peng, Dong-Liang
中科院分区：
文献类型：
--
作者：
Zhang, Qin-Fu;Wang, Lai-Sen;Peng, Dong-Liang
采用等离子体气体冷凝法在真空环境中制备了具有三维交叉连接导电通路的Co纳米团簇组装颗粒膜。系统地研究了这种新型颗粒膜的纵向电阻率随温度的变化和反常霍尔效应。Co纳米团簇组装颗粒膜的纵向电阻率随测量温度的升高先减小后增大，在一定温度T min处出现最小值。在低温区（T < T min），相邻纳米团簇之间的势垒决定了电输运过程，电阻温度系数（TCR）呈现绝缘体型行为。随着温度的升高，热涨落引起的隧穿电导逐渐增加，导致纵向电阻率下降。在高温区，TCR表现出金属型行为，这主要归因于TCR的热稳定性。
A Co nanocluster-assembled granular film with three-dimensional cross-connection paralleled conductive paths was fabricated by using the plasma-gas-condensation method in a vacuum environment. The temperature-dependent longitudinal resistivity and anomalous Hall effect of this new type granular film were systematically studied. The longitudinal resistivity of the Co nanocluster-assembled granular film first decreased and then increased with increasing measuring temperature, revealing a minimum value at certain temperature, T min. In a low temperature region ( T < T min), the barrier between adjacent nanoclusters governed the electrical transport process, and the temperature coefficient of resistance (TCR) showed an insulator-type behavior. The thermal fluctuation-induced tunneling conduction progressively increased with increasing temperature, which led to a decrease in the longitudinal resistivity. In a high temperature region, the TCR showed a metallic-type behavior, which was primarily attributed to th...