Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well.
Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well.
复制标题
InAs 量子阱中面内横向电流引起的螺旋相关光电流
DOI：
10.1038/srep31189
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发表时间：
2016-08-09
影响因子：
4.6
通讯作者：
Zhang XH
中科院分区：
文献类型：
--
作者：
Li JB;Wu XG;Wang GW;Xu YQ;Niu ZC;Zhang XH
我们报道了在InAs量子阱中观察到一种由平面内横向直流电诱导的新型螺旋相关光电流。光电流的振幅与横向电流成线性关系。此外，观察到的入射方位角依赖性与圆形光电效应引起的不同。这种新的光电流是由于横向电流诱导的导价带中载流子分布不对称而产生的。因此，由带间跃迁过程产生的光激发载流子密度被调制并导致观察到的新的方位角依赖关系。观察到的与螺旋相关的光电流的有效产生提供了一种有效的方法来操纵二维半导体系统中的电子自旋，并在自旋电子应用中增加了对自旋相关光电流的电气控制的优势。
We report the observation of a new type of helicity-dependent photocurrent induced by an in-plane transverse direct electric current in an InAs quantum well. The amplitude of the photocurrent depends linearly on the transverse current. Moreover, the observed incident azimuth-angle dependence of this photocurrent is different from that induced by the circular photogalvanic effect. This new photocurrent appears as a result of an asymmetrical carrier distribution in both the conduction and valence bands induced by the transverse current. The photoexcited carrier density created by interband transition processes is thus modulated and leads to the observed new azimuth-angle dependence. The observed efficient generation of the helicity-dependent photocurrent offers an effective approach to manipulate electron spins in two-dimensional semiconductor systems with the added advantage of electrical control of the spin-related photocurrent in spintronic applications.