Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range
Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range
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DOI：
10.1016/j.mee.2005.04.006
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发表时间：
2005-07-01
影响因子：
2.3
通讯作者：
Safak, H
中科院分区：
文献类型：
--
作者：
Karadeniz, S;Tugluoglu, N;Safak, H
本文总结了由电流-电压(I-V)测量获得的Ag/p-SnS和Ag/p-SnSe结构的特性参数的初步结果。测量了Bridgman-Stockbarger生长的p-SnS和p-SnSe层状半导体材料上Ag肖特基接触在不同温度下的反向和正向偏置伏安特性。我们尝试测定了接触特性，如表观势垒高度Phi(BO)、理想因子n和串联电阻R-S。用热电子发射理论计算的表观势垒高度和理想因子与温度有很强的相关性。对正向I-V数据的评估表明，随着温度的降低，表观势垒高度减小，但在理想因子处增大。结果表明，张氏法测得的R-S值与温度有很强的相关性，且随温度升高而减小。已经发现这两个触点都是肖特基类型的。(C)2005 Elsevier B.V.保留所有权利。
This paper summarizes the first results of characteristics parameters obtained from current-voltage (I-V) measurements for Ag/p-SnS and Ag/p-SnSe structure. The reverse and forward bias current-voltage characteristics of Ag Schottky contacts on a Bridgman-Stockbarger grown p-SnS and p-SnSe layered semiconducting material have been measured at various temperatures. We have tried to determine contact properties such as apparent barrier heights Phi(BO), ideality factor n and series resistance R-s. The apparent barrier height and ideality factor calculated by using thermionic emission theory were found to be strongly temperature dependent. Evaluating forward I-V data reveals a decrease at the apparent barrier height, but an increase at the ideality factor with decrease in temperature. It is shown that the values of R-s estimated from Cheung's method were strongly temperature dependent and decreased with increasing temperature. It has been found that both contacts are of Schottky type. (c) 2005 Elsevier B.V. All rights reserved.