CuO nanowire growth on Cu2O by in situ thermal oxidation in air
CuO nanowire growth on Cu2O by in situ thermal oxidation in air
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DOI：
10.1039/c3ce40985f
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发表时间：
2013-10
期刊：
影响因子：
3.1
通讯作者：
Ang Li;Huaihe Song;Jisheng Zhou;Xiaohong Chen;Siyuan Liu
中科院分区：
文献类型：
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作者：
Ang Li;Huaihe Song;Jisheng Zhou;Xiaohong Chen;Siyuan Liu
首次在空气中300-750 °C的温度范围内通过原位热氧化Cu 2 O合成了CuO纳米线。在此过程中，通过SEM，XRD，EDS和线扫描轮廓测量研究了退火温度和生长时间对CuO纳米线生长的影响。我们发现CuO纳米线的成核是一个固态转变过程，纳米线长度随退火时间的变化服从抛物线规律。纳米线的生长表现出扩散控制的行为。在此基础上，提出了Cu_2O成核和生长CuO纳米线的机理。
CuO nanowires were synthesized by in situ thermal oxidation of Cu2O for the first time in the temperature range of 300–750 °C in air. In this process, the effects of annealing temperature and growth time on the growth of CuO nanowires were investigated by SEM, XRD, EDS mapping and line-scan profile measurements. We found that the nucleation of CuO nanowires is a solid-state transformation process, and the nanowire length obeys a parabolic law with annealing time. The nanowire growth shows a diffusion-controlled behavior. Based on the above-mentioned study, the mechanism of the nucleation and growth of CuO nanowires from Cu2O is proposed.