Apparent quantum number paradox in Ag quantum wells on Si(111)
Apparent quantum number paradox in Ag quantum wells on Si(111)
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Si(111) 上 Ag 量子阱中的表观量子数悖论
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
T. Chiang
中科院分区：
文献类型：
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作者：
M. Brinkley;N. Speer;Yang Liu;T. Miller;T. Chiang
对生长在Si（111）-（7×7）衬底上的原子级均匀Ag薄膜的量子阱电子结构的角分辨光电子能谱研究表明，当其中一个子带向费米能级色散时，出现了反常的分叉。这种分叉导致了一个明显的量子数悖论，因为子带必须与连续的整数量子数相关联。显然，只有在膜厚超过15单层，分支迁移退火后，从子带到子带的区域中心，并最终消失。各种测试表明，这种令人困惑的行为是由界面处的重构引起的薄膜电子结构中的横向共振引起的。
Angle-resolved photoemission studies of the quantum well electronic structure in atomically uniform Ag films grown on Si(111)-(7×7) reveal an anomalous bifurcation of one of the subbands as it disperses toward the Fermi level. This bifurcation leads to an apparent quantum number paradox, since subbands must be associated with consecutive integer quantum numbers. Evident only in films thicker than 15 monolayers, the bifurcation migrates upon annealing from subband to subband toward the zone center and ultimately vanishes. Various tests indicate that this perplexing behavior arises from transverse resonances in the film electronic structure caused by the reconstruction at the interface.