105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers
105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers
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DOI：
10.1016/j.sse.2008.04.019
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发表时间：
2008-09
影响因子：
1.7
通讯作者：
C. L. Royer;L. Clavelier;C. Tabone;K. Romanjek;C. Deguet;L. Sanchez;J. Hartmann;M. Roure;H. Grampeix;S. Soliveres;G. Carval;R. Truche;A. Pouydebasque;M. Vinet;S. Deleonibus
中科院分区：
文献类型：
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作者：
C. L. Royer;L. Clavelier;C. Tabone;K. Romanjek;C. Deguet;L. Sanchez;J. Hartmann;M. Roure;H. Grampeix;S. Soliveres;G. Carval;R. Truche;A. Pouydebasque;M. Vinet;S. Deleonibus
