Development of Bragg reflection-type x-ray polarimeter based on a bent silicon crystal using hot plastic deformation
Development of Bragg reflection-type x-ray polarimeter based on a bent silicon crystal using hot plastic deformation
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DOI：
10.1117/12.2629635
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发表时间：
2022-08
期刊：
影响因子：
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通讯作者：
Y. Ueda;Tomoki Uchino;Daiki Ishi;Y. Ezoe;K. Ishikawa;M. Numazawa;Aoto Fukushima;Sae Sakuda;A. Inagaki;H. Morishita;Luna Sekiguchi;Takatoshi Murakawa;Yukine Tsuji;K. Mitsuda;K. Morishita;K. Nakajima
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文献类型：
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作者：
Y. Ueda;Tomoki Uchino;Daiki Ishi;Y. Ezoe;K. Ishikawa;M. Numazawa;Aoto Fukushima;Sae Sakuda;A. Inagaki;H. Morishita;Luna Sekiguchi;Takatoshi Murakawa;Yukine Tsuji;K. Mitsuda;K. Morishita;K. Nakajima
我们正在开发一种新的布拉格反射X射线偏振计使用热塑性变形的硅晶片。布拉格反射式偏振计具有原理简单、调制因子大的优点，但存在可探测能带窄、入射光束聚焦困难的缺点。我们通过在高温下弯曲硅晶片来克服这些缺点。弯曲布拉格反射偏振计具有宽的能量带，使用晶片上的不同角度，并且能够聚焦。我们已经成功地测量X射线偏振与这种方法首次使用样品光学由4英寸的硅（100）晶片。
We are developing a novel Bragg reflection x-ray polarimeter using hot plastic deformation of silicon wafers. A Bragg reflection polarimeter has the advantage of simple principle and large modulation factor but suffers from the disadvantage of a narrow detectable energy band and difficulty to focus an incident beam. We overcome these disadvantages by bending a silicon wafer at high temperature. The bent Bragg reflection polarimeter have a wide energy band using different angles on the wafer and enable focusing. We have succeeded in measuring x-ray polarization with this method for the first time using a sample optic made from a 4-inch silicon (100) wafer.