Timing in thick silicon detectors - an update.
Timing in thick silicon detectors - an update.
复制标题
厚硅探测器的计时——更新。
DOI:
10.1016/j.nima.2007.04.060
复制
发表时间:
2007
期刊:
影响因子:
--
通讯作者:
Kramberger,G
中科院分区:
文献类型:
--
作者:
Studen,A;Clinthorne,N;Mikuž,M;Kramberger,G
Thick silicon detectors are becoming widely used with reliable detectors available. They are often considered as a part of coincidence setup, where the timing resolution is of a crucial importance. Since over-biasing of thick detectors is sometimes unpractical, the timing resolution can be compromised in thick detectors. For this article the electric and Ramo fields in a 1.4 by 1.4mm2pad size and 1mm thick pad detector were calculated. GEANT4 was used to determine the tracks of the interaction electron produced in photon interactions, and the drift of ionized carriers in the detector was simulated. The signals were processed using a virtual preamplifier, a CR-RC shaper with a shaping time of 200ns and a leading edge discriminator. The distributions of delay of the trigger after the event were compared to the measurements and a good agreement was found, allowing for additional noise in experimental setup. We proposed and evaluated an alternative readout strategy reading signals from nine nearest pads which greatly reduces the effects of inhomogeneous Ramo field on the timing resolution.