New Al 0.25 Ga 0.75 N/GaN HEMTs structure with the partial silicon doping
New Al 0.25 Ga 0.75 N/GaN HEMTs structure with the partial silicon doping
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DOI：
10.1049/mnl.2011.0501
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发表时间：
2012-01
影响因子：
1.3
通讯作者：
B. Duan;Yintang Yang
中科院分区：
文献类型：
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作者：
B. Duan;Yintang Yang
应用AlGaN/GaN高电子迁移率晶体管中形成的二维电子气(2DEG)理论，首次在AlGaN层中掺杂部分硅实现了两个2DEG浓度区。由于部分硅正电荷的电场调制效应，在表面电场中引入了一个新的电场峰值。有效地降低了栅极和漏极附近的高电场，且表面电场均匀。由于没有附加电容，部分硅掺杂的结构比传统的电场极板靠近漏极的结构要好。由于均匀的表面电场，击穿电压从传统结构的308V提高到所提出的结构的400V。
By applying the theory of two-dimensional electron gas (2DEG) formed in the AlGaN/GaN high electron mobility transistors, two 2DEG concentration regions are realised by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced in the surface electric field by the electric field modulation effect due to the partial silicon positive charge. The high electric fields near the gate and drain electrodes are decreased effectively, and the surface electric field is uniform. The proposed structure with the partial silicon doping is better than the conventional structures with the electric field plate near the drain, which is due to the absence of the adding capacitance. The breakdown voltage is improved from 308 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.