Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films
Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films
复制标题
TaN衬底预处理对Ru薄膜原子层沉积生长的影响
DOI：
10.1088/0256-307x/24/5/076
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发表时间：
2007
影响因子：
3.5
通讯作者：
Qu Xin
中科院分区：
文献类型：
--
作者：
Zhou Mi;C. Tao;Tan Jing;Ru Guo;Jiang Yu;Liu Ran;Qu Xin
使用双(环戊二烯基)钌[RuCp2]和氧分别作为钌前驱体和反应物，在330°C的沉积温度下，通过原子层沉积(ALD)在TaN衬底上生长多晶钌薄膜。在 ALD 工艺之前，对底层 TaN 衬底进行低能 Ar 离子轰击和 Ru 预沉积，以改善 Ru 成核。通过 X 射线衍射、X 射线光电子能谱、扫描电子显微镜和原子力显微镜来表征 ALD Ru 薄膜的性能。结果表明，Ar+轰击TaN基底的Ru薄膜的成核密度远高于未经任何预处理的薄膜。讨论了可能的原因。
The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition (ALD) using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330°C. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar+ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.