THERMALIZATION EFFECT ON RADIATIVE DECAY OF EXCITONS IN QUANTUM WIRES
THERMALIZATION EFFECT ON RADIATIVE DECAY OF EXCITONS IN QUANTUM WIRES
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DOI：
10.1103/physrevlett.72.924
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发表时间：
1994-02-07
影响因子：
8.6
通讯作者：
SAKAKI, H
中科院分区：
文献类型：
--
作者：
AKIYAMA, H;KOSHIBA, S;SAKAKI, H
研究了分子束外延制备的新型砷化镓量子线中一维激子的辐射衰减。测量了辐射寿命tau(T)的温度依赖性，并与量子阱中二维激子（QWs）的温度依赖性进行了比较：1D激子的tau(T)随T的增长要比二维激子慢得多，导致T的寿命较短，约为20 K。这是由于量子阱中态的一维密度集中发生了热化。基于理论的分析表明，tau(T)在qwi中表示为92平方根T ps K-1/2，在QWs中表示为24T ps K-1。
The radiative decay of one-dimensional (1D) excitons is studied in novel GaAs quantum wires (QWIs) prepared by molecular beam epitaxy. The temperature dependence of the radiative lifetime tau(T) is measured, and is compared with that of 2D excitons in quantum wells (QWs): tau(T) of 1D excitons grows much more slowly with T than that of 2D excitons, resulting in shorter lifetime for T > 20 K. This is ascribed to thermalization in the concentrated 1D density of states in QWIs. Analysis based on a theory has revealed that tau(T) is expressed as 92 square-root T ps K-1/2 in QWIs and as 24T ps K-1 in QWs.