Two-step synthesis of highly emissive C/ZnO hybridized quantum dots with a broad visible photoluminescence
Two-step synthesis of highly emissive C/ZnO hybridized quantum dots with a broad visible photoluminescence
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具有宽可见光致发光的高发射C/ZnO杂化量子点的两步合成
DOI：
10.1016/j.apsusc.2015.12.213
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发表时间：
2016-02-28
影响因子：
6.7
通讯作者：
Guo, Ruiqian
中科院分区：
文献类型：
--
作者：
He, Liangjie;Mei, Shiliang;Guo, Ruiqian
采用两步法在碳量子点表面原位生长ZnO薄膜，提高了碳量子点的可见光发射光谱，获得了较高的量子产率。考察了反应时间、反应温度和油胺/十八烯配比对碳量子点制备的影响。在最佳条件下制备的碳量子点平均粒径为3.4 ± 0.4 nm，光致发光量子产率为29.3%。通过掺杂ZnO层，可以消除C核的表面陷阱，形成新的发光中心，从而显著改善了发光性能。C/ZnO杂化结构的协同效应使其可见光发射明显展宽，光致发光量子产率从29.3%提高到47.3%。所制备的高发光量子点具有宽范围和稳定的发光，其E色坐标为（0.23，0.34），这为下一代白色发光二极管提供了一种很有前途的解决方案。(C)2015 Elsevier B. V.版权所有。
In situ growth of ZnO layer on the surface of carbon dots was realized via a two-step method, which resulted in an enhancement of the broad visible emission with a high quantum yield. Influence of the refluxing time, the temperature and the oleylamine/octadecene ratio was investigated to address the key factors on the preparation of the carbon dots. Under the optimal conditions, the carbon dots with an average diameter of 3.4 +/- 0.4 nm and a photoluminescence quantum yield of 29.3% were achieved. Remarkable improvements of photoluminescence were achieved by the hybridization of the ZnO layer, which can eliminate the surface-trap from the C cores and form the new centers of emission. The synergistic effect arising from the C/ZnO hybridized structure obviously broadened the visible emission and enhanced their photoluminescence quantum yield from 29.3% to 47.3%. The as-prepared highly emissive quantum dots exhibited a broad and stable emission with the Commission Internationaled 'E' clairage chromaticity coordinate of (0.23, 0.34), which could offer a promising solution for the future-generation white light emitting diodes. (C) 2015 Elsevier B.V. All rights reserved.