Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates
Anisotropic-strain-controlled metal-insulator transition in epitaxial NdNiO3 films grown on orthorhombic NdGaO3 substrates
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DOI：
10.1063/1.4826678
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发表时间：
2013-10
影响因子：
4
通讯作者：
X. Lian;Feng Chen;X. Tan;Pingfan Chen;Lingfei Wang;Guan-Yin GAO;Shaowei Jin;Wenxuan Wu
中科院分区：
文献类型：
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作者：
X. Lian;Feng Chen;X. Tan;Pingfan Chen;Lingfei Wang;Guan-Yin GAO;Shaowei Jin;Wenxuan Wu
采用脉冲激光沉积法在正交晶系（110）、（001）和（100）晶面的NdGaO 3衬底上生长了NdNiO 3（NNO）薄膜。结果发现，所有的薄膜是拉伸应变，但显示出显着不同的金属-绝缘体转变（MIT）温度（TMI）（160-280 K），与NNO块体（约200 K）相比。观察到MIT的锐度和MIT上的晶格变化的高度相似性。TMI高度依赖于由不同衬底表面平面引起的正交畸变的大小，并且倾向于在退火后恢复体值。我们的研究结果表明，各向异性的外延应变可以有效地调整的NNO薄膜的MIT，和NiO 6八面体的旋转和变形参与容纳拉伸应变可能会导致不同的TMI。
NdNiO3 (NNO) films were grown by pulsed laser deposition on orthorhombic (110)-, (001)-, and (100)-oriented NdGaO3 substrates. It is found that all the films are tensile-strained but show dramatically different metal-insulator transition (MIT) temperatures (TMI) (160–280 K), as compared with the NNO bulk (∼200 K). A high resemblance in the sharpness of MIT and lattice variation across the MIT was observed. The TMI is highly dependent on the magnitude of the orthorhombic distortion induced by the different substrate surface plane and tends to recover the bulk value after annealing. Our results suggest that the anisotropic epitaxial strain can effectively tune the MIT of NNO films, and the NiO6 octahedra rotation and deformation involved in accommodating the tensile strain might cause the different TMI.