Structure evolution of hydrogenated carbon films from amorphous carbon to fullerene-like nanostructure

Structure evolution of hydrogenated carbon films from amorphous carbon to fullerene-like nanostructure
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氢化碳膜从无定形碳到类富勒烯纳米结构的结构演变

DOI:
10.1002/sia.5568
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发表时间:
2014
影响因子:
1.7
通讯作者:
Xia Rongbin
Xia Rongbin
中科院分区:
化学4区
文献类型:
--
作者:
Wang Chengbing;Ling Xiaoming;Shi Jing;Xia Rongbin

文献摘要

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采用脉冲直流(DC)法制备了氢化非晶碳(A-C:H)薄膜。硅衬底上的等离子体增强化学气相沉积。本研究研究了沉积的富勒烯类纳米结构薄膜的结构和力学演化。结果表明,脉冲直流电是一种高效率的脉冲直流电源。负偏压(−500 ~ −1000 V)显著影响薄膜的生长速度、硬度、表面粗糙度、sp3含量和摩擦性能。作为脉冲式的华盛顿。负偏压增加,薄膜的sp3含量、表面粗糙度、氢含量和摩擦系数降低,但生长速度和硬度增加。在−10 0 0 V沉积的薄膜具有类富勒烯结构,纳米硬度约为19.7 GPA,摩擦系数最小(约0.0 6)。用a-C:H生长机制解释了薄膜的力学性能和结构性能的演变,该机制基于等离子体-表面界面上的相互作用和薄膜中的亚表面反应。版权所有©2014 John Wiley&Sons,Ltd.
A–C:H (hydrogenated amorphous carbon) films were deposited by pulsed direct‐current (d.c.) plasma enhanced chemical vapor deposition on silicon substrates. This study investigated the structural and mechanical evolution of the as‐deposited films with fullerene‐like nanostructure. The results showed that pulsed d.c. negative bias (−500 ~ −1000 V) signally influenced the growth rate, hardness, surface roughness, sp3content, and friction behavior of the films. As the pulsed d.c. negative bias voltage increased, the sp3content, surface roughness, hydrogen content and the friction coefficient of the films decreased; however, the growth rate and the hardness increased. The films deposited at −1000 V with fullerene‐like microstructure display a nanohardness of about 19.7 GPa and the smallest friction coefficient (~0.06). The evolution on mechanical and structural properties of the films are explained by the a–C:H growth mechanism based on the interaction on plasma‐surface interface and the subsurface reactions in the film. Copyright © 2014 John Wiley & Sons, Ltd.