In 0.53 Ga 0.47 As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band
In 0.53 Ga 0.47 As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band
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在低太赫兹频段具有高功率性能的 0.53 Ga 0.47 As/AlAs 双势垒谐振隧道二极管
DOI：
10.1109/iwmts54901.2022.9832442
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Cimbri D
中科院分区：
文献类型：
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作者：
Cimbri D
我们报告了一种In0.53Ga0.47As/AlAs双势垒共振隧穿二极管（RTD）外延结构，该结构在低太赫兹频率（100 - 300 GHz）下具有高功率能力。异质结构的设计使用基于TCAD的量子输运模拟器和实验研究，通过RTD器件的制造和表征。基于提取的小信号等效电路参数，对外延结构的高频射频功率特性进行了分析。我们的分析表明，9 µm2、16 µm2和25 µ m2的大RTD器件在300 GHz时预计可提供约2 mW、4 mW和6 mW的RF功率。
We report about an In0.53Ga0.47As/AlAs doublebarrier resonant tunnelling diode (RTD) epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100−300 GHz). The heterostructure was designed using a TCAD-based quantum transport simulator and experimentally investigated through the fabrication and characterisation of RTD devices. The high-frequency RF power performance of the epitaxial structure was analysed based on the extracted small-signal equivalent circuit parameters. Our analysis shows that a 9 µm2, 16 µm2, and 25 µm2large RTD device can be expected to deliver around 2 mW, 4 mW, and 6 mW of RF power at 300 GHz.