Significant enhancement in photocatalytic activity of (GaN)1-x(ZnO)x nanowires via solubility and crystal facet tailoring
Significant enhancement in photocatalytic activity of (GaN)1-x(ZnO)x nanowires via solubility and crystal facet tailoring
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通过溶解度和晶面调整显着增强(GaN)(1-x)(ZnO)(x)纳米线的光催化活性
DOI：
10.1063/1.5009307
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发表时间：
2018-01-01
期刊：
影响因子：
1.6
通讯作者：
Wang, Defa
中科院分区：
文献类型：
--
作者：
Ren, Bofan;Zhang, Xueliang;Wang, Defa
我们通过化学气相沉积方法报告了纤锌矿结构（GaN）（1-x）（ZnO）（x）固溶体纳米线的溶解度和晶面剪裁。随着生长温度从900℃升高到1000℃，由于ZnO溶解度降低，纳米线形貌从锯齿形变为直线形，带隙从2.70eV增加到3.26eV。由于锯齿形纳米线具有更窄的带隙以吸收更多的太阳光，并且特殊的侧表面原子结构有利于光生电子和空穴的分离，因此其光电化学和光催化性能显着提高。 (c) 2018 年作者。
We report on the solubility and crystal facet tailoring of the wurtzite structured (GaN)(1-x)(ZnO)(x) solid solution nanowires via a chemical vapor deposition method. With increasing the growth temperature from 900 degrees C to 1000 degrees C, the nanowire morphology is changed from zigzag to straight, and the band gap is increased from 2.70 eV to 3.26 eV, due to decreased solubility of ZnO. Photoelectrochemical and photocatalytic performances of the zigzag nanowires are significantly improved because of the narrower band gap for absorbing more solar light and the special lateral surface atomic structure favorable for the separation of photoinduced electrons and holes. (c) 2018 Author(s).