Large area InN terahertz emitters based on the lateral photo-Dember effect
Large area InN terahertz emitters based on the lateral photo-Dember effect
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DOI：
10.1063/1.4930233
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发表时间：
2015-09
影响因子：
4
通讯作者：
J. Wallauer;Christian Grumber;V. Polyakov;R. Iannucci;V. Cimalla;O. Ambacher;M. Walther
中科院分区：
文献类型：
--
作者：
J. Wallauer;Christian Grumber;V. Polyakov;R. Iannucci;V. Cimalla;O. Ambacher;M. Walther
提出了一种基于InN(氮化铟)横向光致衰减效应的大面积太赫兹发射器。横向光致电流的形成是由激光通过加工在InN衬底上的微结构金属覆盖层引起的，导致横向光生载流子分布的不对称。我们的设计使用了简单的金属结构，这是通过传统的二维微结构技术产生的。Inn作为照相材料具有良好的性能，特别适合作为发射器的衬底。我们证明了金属盖的结构可以显著影响发射器的发射强度，通过优化掩模结构留下了改进的空间。
Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room for improvement by optimizing the masking structures.