InAs∕AlSb quantum cascade lasers emitting below 3μm
InAs∕AlSb quantum cascade lasers emitting below 3μm
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DOI：
10.1063/1.2714098
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发表时间：
2007-03
影响因子：
4
通讯作者：
J. Devenson;R. Teissier;O. Cathabard;A. Baranov
中科院分区：
文献类型：
--
作者：
J. Devenson;R. Teissier;O. Cathabard;A. Baranov
Quantum cascade lasers emitting below 3μm are demonstrated. The lasers based on the InAs∕AlSb material system emit at 2.95–2.97μm in pulsed mode with threshold current densities near 3kA∕cm2 at 84K and operate up to room temperature. No degradation has been observed in laser performances compared with InAs∕AlSb quantum cascade lasers emitting at 3.14–3.35μm. The obtained results show no influence of the L valley in InAs on operation of these short wavelength quantum cascade lasers.
