Electrodeposition of silicon from a nonaqueous solvent
Electrodeposition of silicon from a nonaqueous solvent
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从非水溶剂中电沉积硅
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
H. Tannenberger
中科院分区：
文献类型：
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作者：
J. Gobet;H. Tannenberger
从，，，，，，溶液和四氢呋喃中电镀硅，使用ttbap或TBAB作为支撑电解质进行了研究，硅- c，硅- o和硅- n键没有减少。循环伏安法显示卤代硅烷有一个还原峰，然后是钝化峰。在Pt， Au, Ni， Cu玻碳或ITO玻璃上的恒电位和恒流沉积可产生高达0.25 μm的光滑层。较厚的层有裂缝。俄歇光谱显示C（~8）、O（~8）和Cl（~1.5）为杂质（原子百分数）。
Electroplating of silicon from solutions of , , , , , , and in tetrahydrofuran, using , TBAP, or TBAB as supporting electrolyte has been studied Si‒C, Si‒O, and Si‒N bonds are not reduced. Cyclic voltammetry shows a reduction peak, followed by passivation, for the halogenosilanes. Potentiostatic and galvanostatic deposition on Pt, Au, Ni, Cu glassy carbon, or ITO glass yields smooth layers up to 0.25 μm. Thicker layers have cracks. Auger spectroscopy shows C (~8), O (~8), and Cl (~1.5) as impurities (atomic percent).