四半世紀にわたるIGBT開発の軌跡（1984年～2009年）
四半世紀にわたるIGBT開発の軌跡（1984年～2009年）
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IGBT 发展的四分之一世纪 (1984-2009)
DOI：
10.1541/ieejias.131.1
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
規仁 戸倉
中科院分区：
文献类型：
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作者：
規仁 戸倉
非闭锁IGBT是由日本研究人员在25年前开发的，此后，进一步的改进主要是由参与功率半导体器件研究的日本工程师引入的。非闭锁IGBT（1984年）、IEGT（1990年）和FS-IGBT（1999年）的发展是确定IGBT发展研究重点的三个主要里程碑。第一个里程碑是igbt的发展，其特性优于双极结晶体管。第二个里程碑是在不增加导通电压的情况下消除了阻塞电压的限制，从而实现了与GTO一样高的阻塞电压。第三个里程碑是IGBT成为应用最广泛的功率半导体器件。然后，在2006年，一种与SiC和GaN器件具有相同电气特性的器件被报道。这个装置可以被认为是第四个里程碑。在本文中，我试图描述第一代人对IGBT发展的精神和激情。
The non-latch-up IGBT was developed by a Japanese researcher 25 years ago, and thereafter, further modifications have been introduced mainly by Japanese engineers involved in research on power semiconductor devices. The development of non-latch-up IGBT (1984), IEGT (1990), and FS-IGBT (1999) have been the three major milestones that have defined the focus of the research on IGBT development. The 1st milestone was the development of IGBTs with characteristics better than those of Bipolar junction transistors. The 2nd milestone was the removal of limitation of blocking voltage without increase of on-state voltage, resulting in achievement of the blocking voltage as high as that of a GTO. The 3rd milestone resulted in the IGBT becoming the most widely used power semiconductor device. Then, in 2006, a device with electrical characteristics even with those of SiC and GaN devices was reported. This device could be considered the 4th milestone. In this paper, I attempt to describe the spirit and passion which were shared by the 1st generation people of the IGBT development.