High-efficiency DC-to-RF/RF-to-DC interconversion switching module at C-band
High-efficiency DC-to-RF/RF-to-DC interconversion switching module at C-band
复制标题
DOI：
10.1109/eumc.2015.7345758
复制
发表时间：
2015-09
期刊：
影响因子：
--
通讯作者：
R. Ishikawa;K. Honjo
中科院分区：
文献类型：
--
作者：
R. Ishikawa;K. Honjo
高效率的dc - rf和rf - dc转换已经在一个模块上实现，该模块的阻抗开关电路连接在主GaN HEMT晶体管的栅极侧。本文提出了阻抗开关电路的两种电路配置，即使用短/电容和开/短（电感）开关电路。这些可以根据主晶体管的特性来选择和使用。在5.36 GHz时，制作的模块提供了76%的最大dc - rf效率（漏极效率）和66%的最大rf - dc效率。
Both high-efficiency DC-to-RF and RF-to-DC conversions have been performed on a module with an impedance switching circuit connected at the gate side of a main GaN HEMT transistor. Here, two circuit configurations for an impedance switching circuit are proposed that use short/capacitance and open/short(inductance) switching circuits. These can be selected and utilised depending on the characteristics of the main transistor. At 5.36 GHz, the fabricated module delivered a maximum DC-to-RF efficiency (drain efficiency) of 76% and a maximum RF-to-DC efficiency of 66%.