Abrupt GaP/Si hetero-interface using bistepped Si buffer
Abrupt GaP/Si hetero-interface using bistepped Si buffer
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使用双步 Si 缓冲器的突变 GaP/Si 异质界面
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
O. Durand
中科院分区：
文献类型：
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作者：
Y. P. Wang;J. Stodolna;M. Bahri;Jithesh Kuyyalil;T. N. Thanh;S. Almosni;R. Bernard;R. Tremblay;M. F. Silva;A. Létoublon;T. Rohel;K. Tavernier;L. Largeau;G. Patriarche;A. Corre;A. Ponchet;C. Magén;C. Cornet;O. Durand
利用高分辨透射电镜和扫描透射电镜研究了初始Si表面质量对III-V/Si非均质晶体生长过程中III-V/Si界面粗糙度和缺陷形成的影响。通过分子束外延在相邻的Si上生长GaP层（001）。通过研究Si同外延层和GaP/Si异质结构的结构特性，首次证明了Si衬底化学制备的强大作用。然后表明，选择适当的化学制备条件和随后的III-V再生条件可以准抑制epillayer中的微孪晶。最后，发现GaP/Si界面的突发性对Si化学制备非常敏感，并通过在III-V过生长之前使用双台阶Si缓冲液来改善。
We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.