Microstructure and growth mechanism of SiC whiskers on carbon/carbon composites prepared by CVD
Microstructure and growth mechanism of SiC whiskers on carbon/carbon composites prepared by CVD
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DOI：
10.1016/j.matlet.2005.02.088
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发表时间：
2005-08
影响因子：
3
通讯作者：
Fu Qiangang;Li Hejun;Shi Xiaohong;Li Kezhi;Hu Zhi-biao;Wei Jian
中科院分区：
文献类型：
--
作者：
Fu Qiangang;Li Hejun;Shi Xiaohong;Li Kezhi;Hu Zhi-biao;Wei Jian
高质量的碳化硅晶须有望作为C/C复合材料陶瓷涂层的增强元素。以CH3SiCl3（MTS）和H2as为前驱体，在常压下采用化学气相沉积法（CVD）在C/C复合材料表面制备了SiC晶须。XRD、SEM和TEM分析表明，晶须为β-SiC结构，其直径为几百纳米。随着沉积室内MTS浓度的降低，制备的晶须纯度增加，晶须直径减小。生长机理研究表明，CVD-SiC晶须的生长是气固相生长过程。
The SiC whiskers of good quality are expected to act as the reinforcing element in the ceramic coatings for C/C composites. Using CH3SiCl3(MTS) and H2as the precursors, SiC whiskers were prepared on the surface of C/C composites by chemical vapor deposition (CVD) at normal atmosphere pressure. XRD, SEM and TEM analyses show that the whiskers are β-SiC structure and their diameters are several-hundred nanometers. With the descending MTS concentration in the depositing room, the purity of the as-prepared whiskers increases and the diameters of the whiskers decrease. The investigation of growth mechanism shows the CVD-SiC whiskers grown up by the vapor–solid (VS) growth process.