Room Temperature Synthesis of Phosphine-Capped Lead Bromide Perovskite Nanocrystals without Coordinating Solvents

Room Temperature Synthesis of Phosphine-Capped Lead Bromide Perovskite Nanocrystals without Coordinating Solvents
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DOI:
10.1002/ppsc.201900391
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发表时间:
2019-11-19
影响因子:
2.7
通讯作者:
Macdonald, Thomas J.
Macdonald, Thomas J.
中科院分区:
材料科学3区
文献类型:
--
作者:
Ambroz, Filip;Xu, Weidong;Macdonald, Thomas J.

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钙钛矿纳米晶体(NC)的室温合成通常通过采用配体辅助再沉淀(LARP)方法来实现,该方法可以在空气中处理,并且其产物与使用传统热注入方法获得的产物相当。然而,LARP方法通常需要使用配位极性溶剂,如二甲基甲酰胺,由于毒性问题,其不适合大规模生产,并且还可以降解或形成有缺陷的钙钛矿NC。在本文中,报道了溴化铅钙钛矿NC的无胺和油酸的室温合成,其使用三辛基氧化膦和二异辛基次膦酸配体的组合。配体的这种组合为在空气中无极性溶剂合成完全无机的CsPbBr 3(fwhm约为14 nm,发射= 519 nm)和杂化有机-无机FAPbBr(3)(fwhm约为19 nm)NC提供了稳定的平台,其光致发光发射在530 nm和535 nm之间,这符合Rec.2020颜色标准。此外,与传统使用的配体组合相比,膦配体可以容易地从NC表面去除,这对于该技术在光电器件中的未来发展是重要的。
The room temperature synthesis of perovskite nanocrystals (NCs) is typically achieved by employing a ligand-assisted reprecipitation (LARP) method, which can be handled in air, and its products are comparable to what is obtained using the traditional hot-injection method. However, the LARP method typically requires the use of coordinating polar solvents such as dimethylformamide, which are not appropriate for large-scale production due to toxicity concerns and can also degrade or form defective perovskite NCs. Herein, an amine and oleic-acid-free room temperature synthesis of lead bromide perovskite NCs is reported that uses a combination of trioctylphosphine oxide and diisooctylphosphinic acid ligands. This combination of ligands provides a stable platform for the polar-solvent-free synthesis in air of fully inorganic CsPbBr3 (fwhm approximate to 14 nm, emission = 519 nm) and hybrid organic-inorganic FAPbBr(3) (fwhm approximate to 19 nm) NCs with photoluminescence emission between 530 and 535 nm, which is in line with the Rec. 2020 color standards. In addition, it is shown that compared to a traditionally used ligand combination, phosphine ligands can be easily removed from the surface of the NCs, which is important for the future development of this technology in optoelectronic devices.