Diameter-controlled growth of single-crystalline In2O3 nanowires and their electronic properties
Diameter-controlled growth of single-crystalline In2O3 nanowires and their electronic properties
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DOI：
10.1002/adma.200390029
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发表时间：
2003-01-16
影响因子：
29.4
通讯作者：
Zhou, CW
中科院分区：
文献类型：
--
作者：
Li, C;Zhang, DH;Zhou, CW
采用激光烧蚀法制备了单晶In2O_3纳米线。利用单分散的金团簇作为催化剂，实现了对纳米线直径的精确控制。已经进行了广泛的材料表征，以确定这些纳米线的晶格结构(见图)和尺寸。单独的In_2O_3纳米线已被用来构筑通断比高达1000的场效应管。
Single-crystalline In2O3 nanowires have been synthesized using a laser ablation approach. Precise control over the nanowire diameter was achieved by using monodispersed gold clusters as the catalyst. Extensive material characterization has been carried out to determine the lattice structure (see Figure) and dimensions of these nanowires. Individual In2O3 nanowires have been utilized to construct field-effect transistors with on/off ratios up to 1000.