High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors

High-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors
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用于场效应晶体管和生物传感器的高质量、高浓度半导体单壁碳纳米管

DOI:
10.1021/nn401998r
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发表时间:
2013-08-01
期刊:
影响因子:
17.1
通讯作者:
Cheng, Hui-Ming
Cheng, Hui-Ming
中科院分区:
材料科学1区
文献类型:
--
作者:
Li, Wen-Shan;Hou, Peng-Xiang;Cheng, Hui-Ming

文献摘要

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我们开发了一种简单且可扩展的高选择性合成方法。通过原位氢蚀刻生产高质量、高浓度的半导体单壁碳纳米管 (s-SWCNT)。批量获得含有类似 93% s-SWCNT 的样品。这些具有良好结构完整性的s-SWCNT表现出类似于800摄氏度的高抗氧化温度。基于s-SWCNT的薄膜晶体管在开/关比为1.1 x 10(4)时表现出21.1 cm(2) V-1 s(-1)的高载流子迁移率,在载流子迁移率为7.0 cm(2)时表现出4.0 x 10(5)的高载流子迁移率V-1 秒(-1)。使用s-SWCNT制造的生物传感器在室温下具有非常低的多巴胺检测限为10(-18) mol/L。
We developed a simple and scalable selective synthesis method of high,. quality, highly concentrated semiconducting single-wall carbon nanotubes (s-SWCNTs) by in situ hydrogen etching. Samples containing similar to 93% s-SWCNTs were obtained in bulk. These s-SWCNTs with good structural integrity showed a high oxidation resistance temperature of similar to 800 degrees C. Thin-film transistors based on the s-SWCNTs demonstrated a high carrier mobility of 21.1 cm(2) V-1 s(-1) at an on/off ratio of 1.1 x 10(4) and a high on/off ratio of 4.0 x 10(5) with a carrier mobility of 7.0 cm(2) V-1 s(-1). A biosensor fabricated using the s-SWCNTs had a very low dopamine detection limit of 10(-18) mol/L at room temperature.