Reversible displacive transformation in MnTe polymorphic semiconductor
Reversible displacive transformation in MnTe polymorphic semiconductor
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DOI：
10.1038/s41467-019-13747-5
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发表时间：
2020-01-03
影响因子：
16.6
通讯作者：
Sutou, Yuji
中科院分区：
文献类型：
--
作者：
Mori, Shunsuke;Hatayama, Shogo;Sutou, Yuji
位移转变是通过原子的剪切和洗牌实现的无扩散转变。无扩散位移转变和物理性质的改变可以帮助制造用于诸如数据存储和开关的应用的快速半导体器件。已知MnTe是多晶型化合物。在这里，我们表明，一个MnTe半导体薄膜表现出可逆的位移变换的基础上的原子平面洗牌机制，这导致在大的电学和光学对比度。我们发现，MnTe多晶薄膜显示可逆电阻开关通过快速焦耳加热，并使非易失性存储器具有较低的能量和更快的操作相比，传统的相变材料显示扩散非晶到结晶过渡。我们还发现，MnTe薄膜的光学反射率可以通过激光加热可逆地改变。目前的研究结果为开发低功耗和快速运行的电子和光子相变器件提供了新的见解。
Displacive transformation is a diffusionless transition through shearing and shuffling of atoms. Diffusionless displacive transition with modifications in physical properties can help manufacture fast semiconducting devices for applications such as data storage and switching. MnTe is known as a polymorphic compound. Here we show that a MnTe semiconductor film exhibits a reversible displacive transformation based on an atomic-plane shuffling mechanism, which results in large electrical and optical contrasts. We found that MnTe polycrystalline films show reversible resistive switching via fast Joule heating and enable nonvolatile memory with lower energy and faster operation compared with conventional phase-change materials showing diffusional amorphous-to-crystalline transition. We also found that the optical reflectance of MnTe films can be reversibly changed by laser heating. The present findings offer new insights into developing low power consumption and fast-operation electronic and photonic phase-change devices.