Ultrahigh- Voltage SiC p-i-n Diodes With Improved Forward Characteristics
Ultrahigh- Voltage SiC p-i-n Diodes With Improved Forward Characteristics
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DOI：
10.1109/ted.2014.2352279
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发表时间：
2015-02-01
影响因子：
3.1
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Kaji, Naoki;Niwa, Hiroki;Kimoto, Tsunenobu
制造了具有从48 μ m到268 μ m的五种不同n（-）层（i层）厚度的碳化硅（SiC）p-i-n二极管。SiC p-i-n二极管的正向特性通过载流子寿命增强得到了显著改善。在此改进之后，对于具有不同n（-）层厚度的所有二极管，微分导通电阻与电流密度的平方根成反比。结果，正向电流密度-电压特性可以近似地由抛物线函数表示，如在Si p-i-n二极管的情况下。使用268 μ m厚的n（-）层、寿命增强和改进的空间调制结终端延伸结构，实现了超过26.9 kV的非常高的阻断电压和9.7 μ m的低差分导通电阻（2）。Omega.cm
Silicon carbide (SiC) p-i-n diodes having five different n(-)-layer (i-layer) thicknesses from 48 to 268 mu m are fabricated. The forward characteristics of SiC p-i-n diodes are significantly improved by carrier-lifetime enhancement. After this improvement, the differential on-resistance is inversely proportional to the square root of current density for all the diodes with different thicknesses of n(-)-layer. As a result, the forward current density-voltage characteristics can be approximately expressed by a parabolic function, as in the case of Si p-i-n diodes. Using a 268-mu m-thick n(-)-layer, the lifetime enhancement, and an improved space-modulated junction termination extension structure, a very high blocking voltage over 26.9 kV and low differential on-resistance of 9.7 m Omega.cm(2) are achieved.