The Dark Side of Silicon
The Dark Side of Silicon
复制标题
硅的阴暗面
DOI：
10.1007/978-3-319-31596-6
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
H. Tenhunen
中科院分区：
文献类型：
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作者：
A. Rahmani;P. Liljeberg;A. Hemani;A. Jantsch;H. Tenhunen
本书介绍了当今微处理器的主要关注点之一的最新技术水平，这种现象被称为“暗硅”。读者将了解到功率约束（包括泄漏和动态功率）如何限制芯片的大部分在给定时间可以上电的程度，即微处理器可以提供多少实际性能和功能。作者描述了他们对暗硅时代微处理器发展的未来的研究，涵盖了暗硅感知架构的各种重要方面，包括设计，管理，可靠性和测试。读者将受益于减轻暗硅现象的具体建议，包括节能，专用的解决方案和技术，以最大限度地提高微处理器的利用率和可靠性。
This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors.