Effect of de-trapping on carrier transport process in semi-insulating CdZnTe
Effect of de-trapping on carrier transport process in semi-insulating CdZnTe
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DOI：
10.1088/1674-1056/24/6/067203
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发表时间：
2015-04
影响因子：
1.7
通讯作者：
Rongrong Guo;W. Jie;G. Zha;Yadong Xu;Tao Feng;Tao Wang;Zhuotong Du
中科院分区：
文献类型：
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作者：
Rongrong Guo;W. Jie;G. Zha;Yadong Xu;Tao Feng;Tao Wang;Zhuotong Du
采用激光束感应瞬态电流（LBIC）测量方法研究了去俘获对CdZnTe探测器载流子输运过程的影响。捕获时间、去捕获时间和电子的迁移率直接由不同偏置电压下的瞬态波形决定。结果表明，电场增强了阱中心的捕获和发射效应，这两种效应分别与场辅助捕获和Poole-Frenkel效应有关。通过考虑表面复合效应的修正Hecht方程，计算得到电子迁移率为950 cm2/V，相应的电子迁移率-寿命积为1.32×10−3 cm2/V。从LBIC测量得到的捕获时间和释放时间提供了关于传输过程的直接信息。
The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole–Frenkel effect, respectively. The electron mobility is calculated to be 950 cm2/Vs and the corresponding electron mobility-lifetime product is found to be 1.32×10−3 cm2/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.