Optical and electrical properties of sputtered vanadium oxide films
Optical and electrical properties of sputtered vanadium oxide films
复制标题
溅射氧化钒薄膜的光学和电学性能
DOI：
10.1116/1.1676417
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
P. Laou
中科院分区：
文献类型：
--
作者：
F. Gan;P. Laou
采用反应射频磁控溅射技术在Si3N4/Si衬底上制备了厚度为0.1~0.2μm的氧化钒薄膜。用钒金属靶在不同比例的Ar和O2气体中溅射氧化膜。混合气氛中的O2含量对氧化膜的金属-绝缘体转变特性有显著影响。当Ar/O2比为98/2时，制备的氧化膜在绝缘态下具有较高的光透过率，在2~10μm的波长范围内透过率为70%~80%，而在金属态下的透过率很低，不到5%。氧气浓度越高，制备的薄膜没有发生金属-绝缘体转变。在低O2浓度下，薄膜表现出与掺杂氧化钒薄膜相似的特征，具有跨度超过30 °C的较宽的转变区域和较低的转变温度。
Thin films of vanadium oxide with thickness of 0.1 to 0.2 μm were deposited on Si3N4/Si substrate by reactive rf magnetron sputtering. The oxide films were sputtered using a vanadium metal target in various ratios of Ar and O2 gases. The O2 content in the mixed atmosphere has a significant influence on the metal-insulator transition characteristics of the oxide films. The oxide film deposited in an Ar/O2 ratio of 98/2 exhibited high optical transmission of 70% to 80% in wavelength from 2 to 10 μm in insulating state while very low transmission of less than 5% in metallic state. Films prepared with higher O2 concentration showed no metal-insulator transition. In low O2 concentration, films showed characteristics of having both a broader transition region spanning over 30 °C and a lowered transition temperature which are similar to those of doped vanadium oxide films.