Pulsed laser annealing of Be-implanted GaN
Pulsed laser annealing of Be-implanted GaN
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DOI：
10.1063/1.2120893
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发表时间：
2005-11
影响因子：
3.2
通讯作者：
Han-Cong Wang;L. Tan;E. Chor
中科院分区：
文献类型：
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作者：
Han-Cong Wang;L. Tan;E. Chor
研究了分子束外延生长的GaN中Be离子注入后的快速热退火(RTA)和脉冲激光退火热处理(PLA)。研究发现，仅靠常规的RTA不能有效地实现Be掺杂的激活和GaN薄膜中注入缺陷的修复。另一方面，用248 nm KrF准分子激光对注入的GaN薄膜进行聚乳酸退火，得到了良好的掺杂活性和表面形貌及质量。然而，非共振显微拉曼光谱和高分辨X射线衍射谱的观察表明，聚乳酸后Be注入引起的晶体缺陷和应变仍然存在，这可能在一定程度上降低了载流子迁移率，限制了激活效率。这可能是由于248 nm激光在GaN中的浅穿透深度，只修复了较薄的近表面层的晶体缺陷，而较深的缺陷并没有被很好地退火。这个场地..。
Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situ...