Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers
Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers
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DOI：
10.1016/j.matlet.2004.03.021
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发表时间：
2004-08-01
影响因子：
3
通讯作者：
Lee, BT
中科院分区：
文献类型：
--
作者：
Choi, YS;Park, JH;Lee, BT
研究了具有不同InGaN/GaN多量子阱（MQW）有源结构和位错密度范围（近似于7 × 10（8）/cm（2）至近似于9 × 10（9）/cm（2））的发光二极管样品的光致发光（PL）和阴极发光（CL）。结果表明，穿透位错对GaN薄膜的发光有影响，并作为非辐射复合中心。还观察到，光发射受多量子阱结构如量子威尔斯的数量的影响。(C)2004 Elsevier B. V.保留所有权利。
Photoluminescence (PL) and cathodoluminescence (CL) of light emitting diode samples with various InGaN/GaN multi-quantum-well (MQW) active structures and a range of dislocation density (similar to 7 x 10(8)/cm(2) to similar to 9 x 10(9)/cm(2)) were investigated. Results indicate that threading dislocations have impact on the luminescence of GaN thin films and act as a nonradiative recombination center. It was also observed that the optical emission is affected by MQW structure such as the number of quantum wells. (C) 2004 Elsevier B.V. All rights reserved.