All-electrical control of hole singlet-triplet spin qubits at low-leakage points
All-electrical control of hole singlet-triplet spin qubits at low-leakage points
复制标题
低泄漏点空穴单重态-三重态自旋量子位的全电控制
DOI:
10.1103/physrevb.104.195421
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发表时间:
2021
影响因子:
3.7
通讯作者:
G. Burkard
中科院分区:
文献类型:
--
作者:
P. Mutter;G. Burkard
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled by the spin-orbit interaction but additionally by the effect of site-dependent anisotropic $g$ tensors. It is demonstrated that these effects may counteract in such a way as to cancel the coupling at certain detunings and tilting angles of the magnetic field. This feature may be used in singlet-triplet qubits to avoid leakage errors and implement an electrical spin-orbit switch, suggesting the possibility of task-tailored two-axes control. Additionally, we investigate systems with a strong spin-orbit interaction at weak magnetic fields. By exact diagonalization of the dominant Hamiltonian we find that the magnetic field may be chosen such that the qubit ground state is mixed only within the logical subspace for realistic system parameters, hence reducing leakage errors and providing reliable control over the qubit.
影响因子:
4.2
作者:
Froning, F. N. M.;Rancic, M. J.;Braakman, F. R.
通讯作者:
Braakman, F. R.
影响因子:
8.6
作者:
Sigillito, A. J.;Jock, R. M.;Lyon, S. A.
通讯作者:
Lyon, S. A.
影响因子:
56.9
作者:
Petta, JR;Johnson, AC;Gossard, AC
通讯作者:
Gossard, AC