Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
复制标题
脉冲正电子束表征氢化非晶硅薄膜
DOI：
10.1143/jjap.30.2438
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发表时间：
1991
影响因子：
1.5
通讯作者：
Takio Tomimasu Takio Tomimasu
中科院分区：
文献类型：
--
作者：
R. Suzuki;Y. Kobayashi;T. Mikado;A. Matsuda;P. J. Mcelheny;S. Mashima;H. Ohgaki;M. Chiwaki;Tetsuo Yamazaki Tetsuo Yamazaki;Takio Tomimasu Takio Tomimasu
首次将低能脉冲正电子束应用于等离子体增强化学气相沉积法沉积的氢化非晶硅薄膜（厚度为1.1 μm）的表征。通过使用脉冲正电子束，正电子寿命谱测量在不同的射频功率密度下沉积的四个薄膜。在中间功率密度下制备的两种膜中，观察到长寿命组分（τ = 9 ns），这表明存在高浓度的空隙。在最低功率密度下制备的薄膜中观察到一个寿命为319 ps的组分，这是由于在双空位或小空位团簇处捕获的正电子，而在其他薄膜中观察到一个寿命为390 ps-440 ps的组分，这是由于在大空位型缺陷处捕获的正电子。结果清楚地表明，缺陷的性质的强烈影响的射频功率密度。
A low-energy pulsed positron beam was, for the first time, applied to the characterization of hydrogenated amorphous silicon films (∼1 µm in thickness) deposited by means of plasma-enhanced chemical-vapor deposition. By the use of a pulsed positron beam, positron lifetime spectra were measured on four films deposited under different rf-power densities. In two of the films prepared at the intermediate power densities, a long-lived component (τ≃9 ns) was observed, which indicates that a high concentration of voids exists. A component with a lifetime of 319 ps, which is due to trapped positrons at divacancies or small vacancy clusters, was observed in the film prepared at the lowest power density, while a component with a lifetime of 390 ps-440 ps, which is due to trapped positrons at large vacancy-type defects, was observed in the other films. The results clearly indicate that the defect properties are strongly influenced by the rf-power density.