Stress Control and Ferroelectric Properties of Lead Zirconate Titanate (PZT) Thin Film on Si Substrate with Buffer Layers
Stress Control and Ferroelectric Properties of Lead Zirconate Titanate (PZT) Thin Film on Si Substrate with Buffer Layers
复制标题
DOI：
10.1143/jjap.44.6900
复制
发表时间：
2005-09
影响因子：
1.5
通讯作者：
K. Fujito;N. Wakiya;N. Mizutani;K. Shinozaki
中科院分区：
文献类型：
--
作者：
K. Fujito;N. Wakiya;N. Mizutani;K. Shinozaki
通过引入钇稳定的氧化锆（YSZ）、CeO2和（La,Sr）CoO3 （LSCO）缓冲层，在Si衬底上生长出具有外延关系的锆钛酸铅（PZT）薄膜。采用脉冲激光沉积（PLD）技术制备了有利于外延PZT薄膜生长和控制残余应力的缓冲层。采用脉冲金属有机化学气相沉积方法在[A]: LSCO*/CeO2/YSZ/Si和[B]: LSCO*/PZT*/LSCO/CeO2/YSZ/Si上制备了PZT薄膜。通过改变LSCO*和PZT*层的厚度来控制PZT薄膜中的残余应力。研究了残余应力与PZT薄膜铁电性能的关系。随着LSCO*厚度的变化，PZT薄膜的残余拉伸应力在[A]中最大。在LSCO*厚度固定为188 nm时，增加PZT*层厚度使PZT薄膜的残余拉伸应力从2.92 GPa增加到2.67 GPa。因此，残余极化（2Pr）从15µC/cm2增加到27µC/cm2，表明可以通过引入缓冲层来控制残余应力，从而提高铁电性能。
Lead zirconate titanate (PZT) thin films were grown on a Si substrate with an epitaxial relationship by introducing yttria-stabilized zirconia (YSZ), CeO2, and (La,Sr)CoO3 (LSCO) buffer layers. The buffer layers, which facilitated the growth of the epitaxial PZT thin film and controlled the residual stress, were deposited by pulsed laser deposition (PLD). The PZT thin films were fabricated on [A]: LSCO*/CeO2/YSZ/Si and [B]: LSCO*/PZT*/LSCO/CeO2/YSZ/Si by pulsed metalorganic chemical vapor deposition. The respective thicknesses of the LSCO* and PZT* layers were changed to control the residual stress in the PZT thin films. The relationship between residual stress and the ferroelectric properties of the PZT thin films was investigated. Residual tensile stresses in the PZT thin films were maximum in [A] as LSCO* thickness changed. Increasing the PZT* layer thickness at a fixed thickness of LSCO* of 188 nm changed the residual tensile stress in the PZT thin films from 2.92 GPa to 2.67 GPa. Consequently, remanent polarization (2Pr) was increased from 15 µC/cm2 to 27 µC/cm2, suggesting that residual stress may be controlled by introducing buffer layers and that ferroelectric properties may be improved.