Enhanced Optoelectronic Performance of CVD-Grown Metal− Semiconductor NiTe2/MoS2 Heterostructures
Enhanced Optoelectronic Performance of CVD-Grown Metal− Semiconductor NiTe2/MoS2 Heterostructures
复制标题
CVD 生长金属半导体 NiTe2/MoS2 异质结构的增强光电性能
DOI：
10.1021/acsami.0c02166
复制
发表时间：
2020
影响因子：
9.5
通讯作者：
Hu Zhanggui
中科院分区：
文献类型：
--
作者：
Zhai Xiaokun;Xu Xing;Peng Jiangbo;Jing Fangli;Zhang Qinglin;Liu Hongjun;Hu Zhanggui
货车德瓦耳斯（vdW）异质结构是二维（2D）电子和光电子器件的基本块。本文采用两步化学气相沉积（CVD）法制备了高质量的二维金属-半导体NiTe 2/MoS 2异质结构。基于该异质结构的背栅场效应晶体管（FET）和光电探测器显示出比原始MoS 2单层更好的电子和光电性能，这是由于前者器件中的异质界面更好。特别是，在相同的工艺条件下，这种基于金属-半导体异质结的光电探测器的上升时间和衰减时间比纯MoS 2快3个数量级。通过外延生长金属vdW层状材料来增强电子行为和光电响应，可以为提高光电器件性能提供一种新的方法。
Van der Waals (vdW) heterostructures are the fundamental blocks for two-dimensional (2D) electronic and optoelectronic devices. In this work, a high-quality 2D metal–semiconductor NiTe2/MoS2heterostructure is prepared by a two-step chemical vapor deposition (CVD) growth. The back-gated field-effect transistors (FETs) and photodetectors based on the heterostructure show enhanced electronic and optoelectronic performance than that of a pristine MoS2monolayer, owing to the better heterointerface in the former device. Especially, this photodetector based on the metal–semiconductor heterostructure shows 3 orders faster rise time and decay time than that of the pristine MoS2under the same fabrication procedure. The enhancement of electronic behavior and optoelectronic response by the epitaxial growth of metallic vdW layered materials can provide a new method to improve the performance of optoelectronic devices.