Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory
Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory
复制标题
高性能金属氧化物晶体管的半导体和介电层的协同硼掺杂：实验与理论的相互作用
DOI：
10.1021/jacs.8b06395
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发表时间：
2018-10-03
影响因子：
15
通讯作者：
Marks, Tobin J.
中科院分区：
文献类型：
--
作者：
Zhang, Xinan;Wang, Binghao;Marks, Tobin J.
我们报告的研究结果，以提高金属氧化物（MO）薄膜晶体管（TFT）的性能，通过掺杂的半导体（In 2 O3）和栅极电介质（Al 2 O3）层与硼（产生IBO和ABO，分别），并提供了第一个定量分析如何B掺杂影响电荷传输在这些MO电介质和半导体矩阵。1-9原子% B掺杂对MO微结构、形貌、氧缺陷、电荷输运和介电性能的影响一起详细分析，通过互补的实验（微结构、电学）和理论（从头算MD、DFT）方法。结果表明，B掺杂抑制了In 2 O3晶体的生长，同时抑制了电子俘获和载流子产生的缺陷。在相邻的Al 2 O3电介质中，B掺杂增加了介电常数和折射率，同时降低了漏电流。此外，结合具有6原子% B的IBO沟道和具有10原子% B的ABO沟道的优化的溶液处理的TFT表现出高达11 cm（2）V-1 s（-1）的场效应迁移率，电流开/关比>10（5），阈值电压= 0.6 V，以及优良的上级偏置应力耐久性。
We report the results of a study to enhance metal oxide (MO) thin-film transistor (TFT) performance by doping both the semiconductor (In2O3) and gate dielectric (Al2O3) layers with boron (yielding IBO and ABO, respectively) and provide the first quantitative analysis of how B doping affects charge transport in these MO dielectric and semiconducting matrices. The impact of 1-9 atom % B doping on MO microstructure, morphology, oxygen defects, charge transport, and dielectric properties is analyzed together, in detail, by complementary experimental (microstructural, electrical) and theoretical (ab initio MD, DFT) methods. The results indicate that B doping frustrates In2O3 crystallization while suppressing defects responsible for electron trapping and carrier generation. In the adjacent Al2O3 dielectric, B doping increases the dielectric constant and refractive index while reducing leakage currents. Furthermore, optimized solution-processed TFTs combining IBO channels with 6 atom % B and ABO dielectrics with 10 atom % B exhibit field effect mobilities as high as 11 cm(2) V-1 s(-1), current on/off ratios >10(5), threshold voltages = 0.6 V, and superior bias stress durability.