Impurity-bound magnetic polarons in diluted magnetic semiconductors.
Impurity-bound magnetic polarons in diluted magnetic semiconductors.
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DOI：
10.1103/physrevb.50.5264
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发表时间：
1994-08
期刊：
影响因子：
--
通讯作者：
Hagston;Stirner;Harrison;Holbrook;Goodwin
中科院分区：
文献类型：
--
作者：
Hagston;Stirner;Harrison;Holbrook;Goodwin
理论计算了在稀释的磁性半导体中，由结合到供体或受体离子位置的载流子所产生的磁极化子能。计算了极化子能量与磁场、温度和磁性离子浓度的关系。同样，中心细胞校正对极化子能量的影响已经确定。将极化子能量的计算值与实验结果进行了比较，并讨论了比较的意义。
Theoretical calculations of magnetic polaron energies resulting from charge carriers bound to donor or acceptor ion sites in diluted magnetic semiconductors have been performed. The dependence of the polaron energy on the magnetic field, the temperature, and the concentration of the magnetic ion has been evaluated. Similarly the effects of central cell corrections on polaron energies have been determined. The calculated values of the polaron energies are compared with experimental results and the implications of the comparison are discussed.