Room temperature continuous-wave operation of InAs/InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy
Room temperature continuous-wave operation of InAs/InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy
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DOI：
10.1063/1.2985900
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发表时间：
2008-09
影响因子：
4
通讯作者：
Shuangbin Li;Q. Gong;Y. Lao;K. He;J. Li;YG（重点实验室） Zhang;S. Feng;H. Wang
中科院分区：
文献类型：
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作者：
Shuangbin Li;Q. Gong;Y. Lao;K. He;J. Li;YG（重点实验室） Zhang;S. Feng;H. Wang
报道了用气体源分子束外延生长的1.55μm波长InAs量子点激光器。激光器结构的有源区由嵌入InGaAsP层中的五重堆叠InAs QD层组成。脊波导激光器的加工和连续波模式的操作之间实现20和70°C，与69 K的特征温度。高的内部量子效率（56%）和低的无限长的阈值电流密度（128 A scincm 2每量子点层），获得了作为解理设备在室温下。通过改变激光腔长，可以覆盖1.556 ~ 1.605μm的激射波长范围。
We report on the InAs quantum dots (QDs) laser in the 1.55μm wavelength region grown by gas source molecular-beam epitaxy. The active region of the laser structure consists of fivefold-stacked InAs QD layers embedded in the InGaAsP layer. Ridge waveguide lasers were processed and continuous-wave mode operation was achieved between 20 and 70°C, with characteristic temperature of 69K. High internal quantum efficiency (56%) and low infinite length threshold current density (128A∕cm2 per QD layer) was obtained for the as-cleaved devices at room temperature. The lasing wavelength range between 1.556 and 1.605μm can be covered by varying the laser cavity length.