Anomalous Hall effects in Co2FeSi Heusler compound films and Co2FeSi-Al2O3 granular films
Anomalous Hall effects in Co2FeSi Heusler compound films and Co2FeSi-Al2O3 granular films
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DOI：
10.1063/1.4707846
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发表时间：
2012-04
影响因子：
3.2
通讯作者：
Z. Qin;X. D. Liu;Zhi-Qing Li
中科院分区：
文献类型：
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作者：
Z. Qin;X. D. Liu;Zhi-Qing Li
采用射频溅射沉积法在室温、673和873 K下制备了三种Co2FeSi Heusler复合薄膜，并在室温下采用共溅射沉积法制备了一系列（Co2FeSi）x(Al2O3)1−x（0.4≤x）颗粒薄膜。实验研究了这些薄膜的异常霍尔电阻率、低场霍尔灵敏度和纵向电阻率的结构和温度行为。我们发现室温下沉积的Co2FeSi Heusler复合薄膜结晶不良，673 K沉积的薄膜结晶为无序的A2型结构，873 K沉积的薄膜中存在L21和B2结构。在673和873 K下沉积的Co2FeSi薄膜，饱和异常霍尔电阻率ρAs以纵向电阻率ρxx = ρAs∝ρxxn为尺度，且n远大于2。（Co2FeSi）x(Al2O3)1−x（0.58≤x≤1）的ρAs和ρxx之间没有标度关系，x=1表示沉积在室温下的Co2FeSi薄膜。
We fabricated three Co2FeSi Heusler compound films at different temperatures (room temperature, 673, and 873 K) by rf sputtering deposition method and a series of (Co2FeSi)x(Al2O3)1−x (0.4 ≲x≤1) granular films at room temperature by co-sputtering method. The structures as well as the temperature behaviors of anomalous Hall resistivities, low-field Hall sensitivities, and longitudinal resistivities of those films were investigated experimentally. We found that the Co2FeSi Heusler compound film deposited at room temperature is poorly crystallized, the film deposited at 673 K is crystallized in the disordered A2 type structure, and L21 and B2 structures are present in the film deposited at 873 K. For the Co2FeSi films deposited at 673 and 873 K, the saturated anomalous Hall resistivity ρAs scales with the longitudinal resistivity ρxx as ρAs∝ρxxn, with n much larger than 2. There is no scaling relation between ρAs and ρxx for the (Co2FeSi)x(Al2O3)1−x (0.58≤x≤1, x=1 represents the Co2FeSi film deposited at roo...