Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation
Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation
复制标题
DOI：
10.1007/s10762-015-0231-z
复制
发表时间：
2016-05-01
影响因子：
2.9
通讯作者：
Moodie, D. G.
中科院分区：
文献类型：
--
作者：
Hatem, O.;Freeman, J. R.;Moodie, D. G.
利用金属有机化学气相沉积(MOCVD)生长的掺铁InGaAsP晶片制作的光导(PC)开关，通过脉冲激发有效地产生了太赫兹(THz)频率辐射，波长在800-1550 nm之间。与我们以前研究的Fe掺杂InGaAs晶片相比，Fe：InGaAsP晶片的暗电阻率提高了5倍，达到10ka“cm，Fe：InGaAsP PC开关产生的THz功率发射增加了5倍，并讨论了Fe掺杂浓度(1E16~1.5E17 cm(-3))对光吸收(800~1600 nm)、电阻率和THz发射的影响。
We demonstrate efficient generation of terahertz (THz) frequency radiation by pulsed excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches fabricated using Fe-doped InGaAsP wafers, grown by metal organic chemical vapor deposition (MOCVD). Compared to our previous studies of Fe-doped InGaAs wafers, Fe:InGaAsP wafers exhibited five times greater dark resistivity to give a value of 10 ka" cm, and Fe:InGaAsP PC switches produced five times higher THz power emission. The effect of Fe-doping concentration (between 1E16 and 1.5E17 cm(-3)) on optical light absorption (between 800 and 1600 nm), on resistivity, and on THz emission is also discussed.