SITE-BINDING MODEL OF ELECTRICAL DOUBLE-LAYER AT OXIDE-WATER INTERFACE
SITE-BINDING MODEL OF ELECTRICAL DOUBLE-LAYER AT OXIDE-WATER INTERFACE
复制标题
DOI：
10.1039/f19747001807
复制
发表时间：
1974-01-01
期刊：
影响因子：
--
通讯作者：
HEALY, TW
中科院分区：
文献类型：
--
作者：
YATES, DE;LEVINE, S;HEALY, TW
介绍了氧化物/电解质水溶液界面的一个位点结合模型，其中提出了吸附的抗衡离子与离散的带电表面基团形成界面离子对。该模型被用来计算理论的表面电荷密度的电位决定（H+/OH-）离子和外亥姆霍兹平面，这是与氧化物的实验数据一致的电位。提供了一个解释二氧化硅和大多数其他氧化物的表面羟基的解离常数方面的差异。
A site-binding model of the oxide/aqueous electrolyte interface is introduced, in which it is proposed that the adsorbed counter ions form interfacial ion pairs with discrete charged surface groups. This model is used to calculate theoretical surface charge densities of the potential-determining (H+/OH–) ions and the potential at the Outer Helmholtz Plane, which are shown to be consistent with experimental data for oxides. An explanation is provided for the difference between silica and most other oxides in terms of the dissociation constants of the surface hydroxyl groups.